Carbon-based transistors are breaking records and performing better than silicon counterparts, according to two upcoming presentations at the 2011 IEEE International Electron Devices Meeting.
IBM will describe a 280GNz transistor made from synthesised graphene, which has achieved record radio-frequency performance. The company has demonstrated a 280-GHz cut-off frequency in a 40-nm gate-length FET, the fastest ever reported from synthesized graphene. They also achieved record high output current (5 mA/µm) and transconductance (2 mS/µm) in synthesized graphene FETs, reports Electronics News. IBM's second paper will look at Sub-10-nm Carbon Nanotube Transistors, outlining the first experimental demonstration of such a product.
Both papers will be presented at the 2011 IEEE International Electron Devices Meeting, on the 5-7 December in Washington.
Documents and links
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Electronics News report
Nanoscale carbon-based future for transistor technology
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